FCH35N60

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FCH35N60 datasheet

• Маркировка
  FCH35N60
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FCH35N60 Continuous Drain Current: 35 A Current - Continuous Drain (id) @ 25?° C: 35A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 28.8 S Gate Charge (qg) @ Vgs: 181nC @ 10V Gate Charge Qg: 139 nC Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 6640pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 312.5W Power Dissipation: 312.5 W Rds On (max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V Resistance Drain-source Rds (on): 79 mOhms Series: SuperMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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